note: 1. *1 measurin g on substrate at 17 mm 10 mm 1 mm tr1, tr2 (common base, input open circuited) note: measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. embossed t yp e ( thermo-com p ression sealin g) r s p ecification : 10 000 p cs / reel mw c c pin name unit v v v 6. collector(tr1) 2. base(tr1) 5. base(tr2) collector(tr2) 4. emitter(tr2) internal connection 2pf -0.2 -0.5 v 150 mhz collector output capacitance cob vcb = -10 v, ie = 0, f = 1 mhz transition frequency ft vce = -10 v, ic = -2 ma collector-emitter saturation voltage vce(sat) ic = -100 ma, ib = -10 ma -100 a forward current transfer ratio hfe vce = -10 v, ic = -2ma 210 460 - collector-emitter cutoff current (base open) iceo vce = -10 v, ib = 0 v collector-base cutoff current (emitter open) icbo vcb = -20 v, ie = 0 -0.1 a emitter-base voltage (collector open) vebo ie = -10 a, ic = 0 -7 v collector-emitter voltage (base open) vceo ic = -2 ma, ib = 0 -50 v collector-base voltage (emitter open) vcbo ic = -10 a, ie = 0 -60 max unit electrical characteristics ta = 25 c 3 c parameter symbol conditions min 1. emitter(tr1) 3. typ emitter-base voltage (collector open) vebo collector current ma -100 -60 collector-emitter voltage (base open) vceo -50 packing semiconductor company, panasonic corporation 2010.3.1 2010.9.6 prepared revised tentative DMA30401 total pages page tstg DMA30401 silicon pnp epitaxial planar type (tr1) for general amplification marking symbol : a7 silicon pnp epitaxial planar type (tr2) tr1 tr2 collector-base voltage (emitter open) vcbo ic peak collector current icp -200 ma absolute maximum ratings ta = 25 c symbol rating parameter -55 to +150 -7 package code : sssmini6-f2-b overall total power dissipation * 1 pt 125 junction temperature tj 150 storage temperature 3 4 5 6 tr 1 tr 2 2 1
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